TY  - BOOK
AU  - Grebennikov, Andrei,
TI  - Switchmode RF and microwave power amplifiers
SN  - 9780124159075
U1  - 621.384 GRE 
PY  - 2012///
CY  - Amsterdam
PB  - Elsevier/AP, Academic Press is an imprint of Elsevier
KW  - Power amplifiers
KW  - Microwave amplifiers
KW  - Power gain,
KW  - Spectral-domain analysis, stability
KW  - E-Books
N1  - Chapter 1 - Power Amplifier Design Principles; http://www.sciencedirect.com/science/article/pii/B9780124159075000018; Chapter 2 - Class-D Power Amplifiers; http://www.sciencedirect.com/science/article/pii/B978012415907500002X; Chapter 3 - Class-F Power Amplifiers; http://www.sciencedirect.com/science/article/pii/B9780124159075000031; Chapter 4 - Inverse Class-F; http://www.sciencedirect.com/science/article/pii/B9780124159075000043; Chapter 5 - Class-E with Shunt Capacitance; http://www.sciencedirect.com/science/article/pii/B9780124159075000055; Chapter 6 - Class-E with Finite DC-Feed Inductance; http://www.sciencedirect.com/science/article/pii/B9780124159075000067; Chapter 7 - Class-E with Quarterwave Transmission Line; http://www.sciencedirect.com/science/article/pii/B9780124159075000079; Chapter 8 - Broadband Class-E; http://www.sciencedirect.com/science/article/pii/B9780124159075000080; Chapter 9 - Alternative and Mixed-Mode High-Efficiency Power Amplifiers; http://www.sciencedirect.com/science/article/pii/B9780124159075000092; Chapter 10 - High-Efficiency Doherty Power Amplifiers; http://www.sciencedirect.com/science/article/pii/B9780124159075000109; Chapter 11 - Predistortion Linearization Techniques; http://www.sciencedirect.com/science/article/pii/B9780124159075000110
N2  - Abstract: Chapter 1 describes the basic principles of power amplifier design procedures. Based on the spectral-domain analysis, the concept of a conduction angle is introduced with simple and clear analyses of the basic Classes A, AB, B, and C of the power amplifier operation. Classes of operation based upon a finite number of harmonics are discussed and described. Nonlinear models are given for MOSFET, MESFET, HEMT, and bipolar devices (including HBTs), which have very good prospects for power amplifiers using modern microwave monolithic integrated circuits. The effect of the device input parameters on the conduction angle at high frequencies is explained. The concept and design of push–pull amplifiers using balanced transistors are presented. The possibility of the maximum power gain for a stable power amplifier is discussed and analytically derived. The parasitic parametric effect due to the nonlinear collector capacitance and measures for its cancellation in practical power amplifiers are discussed. Finally, the basics of the load–pull characterization and distortion fundamentals are presented
UR  - http://www.sciencedirect.com/science/book/9780124159075
ER  -