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  <titleInfo>
    <title>Nanoscale transistors : device physics, modeling and simulation</title>
    <subTitle>: device physics, modeling and simulation</subTitle>
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    <namePart>;Lundstrom,Mark. ;Guo,Jing.</namePart>
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  <typeOfResource>text</typeOfResource>
  <genre authority="">;Nanotechnology.-;Metal oxide semiconductor field-effect transistors.-;Nanostructured materials.-;Chimie.-;Science des matériaux.-; Electronics and Transistors.</genre>
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    <place>
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    <publisher>: Springer</publisher>
    <dateIssued>,2006</dateIssued>
    <issuance>monographic</issuance>
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  <physicalDescription>
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    <extent>vi, 217 p.  : ill. 24cm.</extent>
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  <note type="statement of responsibility">:Mark Lundstrom</note>
  <classification authority="ddc">621.381528 LUN</classification>
  <identifier type="isbn">9780387280028</identifier>
  <identifier type="">;S.R. Book Distributor ;12,Satyam Enclave, G T Road Ghaziabad.</identifier>
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