01070nam a2200277Ia 4500008004100000040002200041100001500063245003700078245006800115245001600183260001100199260003500210300001800245440002500263440004600288440006800334650004600402650003600448650001500484650006800499650001000567650002000577856001000597856016800607999001700775140822s9999    xx            000 0 und d  aNPTELcIIT Madras  aBhat, K.N.  aHigh Speed Devices and Circuits:  bMESFET: Effects of Channel length and gate length on IDS and gm  c/ K.N. Bhat  aMadras  bIndian Insitiute of Technology  fVideo Lecture  aNPTEL Lecture Series  nElectronics And Communication Engineering  pMESFET: Effects of Channel length and gate length on IDS and gm  aElectronics And Communication Engineering  aHigh Speed Devices and Circuits  aIIT Madras  aMESFET: Effects of Channel length and gate length on IDS and gm  aNPTEL  aProf. K.N. Bhat  3Video  uhttp://video.snu.edu.in/index.php?id=4273&cat=Electronics And Communication Engineering&course=High Speed Devices and Circuits&url=Phase1_Video/117106089/lec25.mp4  c25992d25992