TY  - BOOK
AU  - Bhat, K.N.
TI  - High Speed Devices and Circuits: MESFET: Effects of Channel length and gate length on IDS and gm
CY  - Madras
PB  - Indian Insitiute of Technology
KW  - Electronics And Communication Engineering
KW  - High Speed Devices and Circuits
KW  - IIT Madras
KW  - MESFET: Effects of Channel length and gate length on IDS and gm
KW  - NPTEL
KW  - Prof. K.N. Bhat
UR  - http://video.snu.edu.in/index.php?id=4273&cat=Electronics And Communication Engineering&course=High Speed Devices and Circuits&url=Phase1_Video/117106089/lec25.mp4
ER  -