| 000 | 00820nam a22001937a 4500 | ||
|---|---|---|---|
| 003 | SNU | ||
| 005 | 20140404144808.0 | ||
| 008 | 140404b xxu||||| |||| 00| 0 eng d | ||
| 020 | _a9780387280028 | ||
| 028 |
_a,Maya Library Service. _b,Manish Abhinav Plaza, Dwarka , New Delhi. _c,375 _d,28/3/2014 |
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| 082 | _a621.381528 LUN | ||
| 100 |
_a;Lundstrom, Mark. _a; Guo,Jing. |
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| 245 |
_aNanoscale transistors. _b:Device physics, modeling and simulation. _c: Mark Lundstrom. |
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| 260 |
_a,New York _b:Springer _c,2006. |
||
| 300 |
_avi, 217 p. _b: ill. _c24cm. |
||
| 365 | _b9428 | ||
| 655 |
_b;Nanotechnology. _b;Metal oxide semiconductor field-effect transistors. _b;Nanostructured materials. _b;Chimie. _b;Science des matériaux. _b;and Nanoscale transistors : device physics, modeling and simulation. |
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| 942 |
_2ddc _cBOOK |
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| 999 |
_c10590 _d10590 |
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