| 000 | 00818nam a22001937a 4500 | ||
|---|---|---|---|
| 003 | SNU | ||
| 005 | 20140429141313.0 | ||
| 008 | 140429b xxu||||| |||| 00| 0 eng d | ||
| 020 | _a9780387280028 | ||
| 028 |
_a;S.R. Book Distributor _b;12,Satyam Enclave, G T Road Ghaziabad. _c;1208 _d;21/4/2014 |
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| 082 | _a621.381528 LUN | ||
| 100 |
_a;Lundstrom,Mark. _a;Guo,Jing. |
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| 245 |
_aNanoscale transistors : device physics, modeling and simulation _b: device physics, modeling and simulation _c:Mark Lundstrom |
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| 260 |
_a;New York _b: Springer _c,2006. |
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| 300 |
_avi, 217 p. _b : ill. _c24cm. |
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| 365 | _b6735 | ||
| 655 |
_b;Nanotechnology. _b;Metal oxide semiconductor field-effect transistors. _b;Nanostructured materials. _b;Chimie. _b;Science des matériaux. _b; Electronics and Transistors. |
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| 942 |
_2ddc _cBOOK |
||
| 999 |
_c10645 _d10645 |
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