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040 _aNPTEL
_cIIT Madras
100 _aBhat, K.N.
245 _aHigh Speed Devices and Circuits:
245 _bMESFET: Effects of Channel length and gate length on IDS and gm
245 _c/ K.N. Bhat
260 _aMadras
260 _bIndian Insitiute of Technology
300 _fVideo Lecture
440 _aNPTEL Lecture Series
440 _nElectronics And Communication Engineering
440 _pMESFET: Effects of Channel length and gate length on IDS and gm
650 _aElectronics And Communication Engineering
650 _aHigh Speed Devices and Circuits
650 _aIIT Madras
650 _aMESFET: Effects of Channel length and gate length on IDS and gm
650 _aNPTEL
650 _aProf. K.N. Bhat
856 _3Video
856 _uhttp://video.snu.edu.in/index.php?id=4273&cat=Electronics And Communication Engineering&course=High Speed Devices and Circuits&url=Phase1_Video/117106089/lec25.mp4
999 _c25992
_d25992