000			01053nam a2200241Ia 4500
003			SNU
005			20140829164019.0
008			140822s9999 xx 000 0 und d
040			_aNPTEL _cIIT Madras
100			_aBhat, K.N.
245			_aHigh Speed Devices and Circuits: _bMESFET: Effects of Channel length and gate length on IDS and gm _c/ K.N. Bhat
260			_aMadras _bIndian Insitiute of Technology
300			_fVideo Lecture
440			_aNPTEL Lecture Series _nElectronics And Communication Engineering _pMESFET: Effects of Channel length and gate length on IDS and gm
650			_aElectronics And Communication Engineering
650			_aHigh Speed Devices and Circuits
650			_aIIT Madras
650			_aMESFET: Effects of Channel length and gate length on IDS and gm
650			_aNPTEL
650			_aProf. K.N. Bhat
856			_3Video _uhttp://video.snu.edu.in/index.php?id=4273&cat=Electronics And Communication Engineering&course=High Speed Devices and Circuits&url=Phase1_Video/117106089/lec25.mp4
942			_2ddc _cNP SNU
999			_c30085 _d30085