000			01578nam a22002417a 4500
005			20260514135221.0
008			260514b |||||||| |||| 00| 0 eng d
020			_a9780124200319
028			_a: Brijwasi Book Distributors _b: H-87, Lalita Park, Laxmi Nagar, Delhi _c: BW/000555 _d: 11/05/2026
082			_a621.38 CHA
100			_aChauhan, Yogesh Singh.
100			_a; Lu, Darsen Duane.
245			_aFinfet Modeling for Ic Simulation and Design _b: Using the Bsim-cmg Standard. _c/Yogesh Singh Chauhan.
260			_a, London _b: Elsevier _c, 2015.
300			_axi, 292p. _c: 24cm.
365			_b5702
520			_aThis book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation
650			_aFinFET
650			_aFinFET standard model
650			_aFinFET circuit design
700			_aYogesh Singh Chauhan
942			_cBOOK
999			_c68075 _d68075