| 000 | 00953nam a22002057a 4500 | ||
|---|---|---|---|
| 003 | SNU | ||
| 005 | 20130717120430.0 | ||
| 008 | 130717b xxu||||| |||| 00| 0 eng d | ||
| 020 | _a9788181288554 | ||
| 028 |
_aGlobal Alliance Book Distributors _bA-312, Nanad Nikunj Meerut Road, Ghaziabad, U.P.-201001 _cInvoice No. 398 _d08/07/2013 |
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| 082 | _a621.381528 LUN | ||
| 100 |
_aLundstrom, Mark _a; Guo, Jing |
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| 245 |
_aNanoscale transistors _b: device physics, modeling and simulation. _c/ Mark Lundstrom and Jing Guo. |
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| 250 | _bSpringer International Edition. | ||
| 260 |
_aNew York _b: Springer, _c©2006. |
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| 300 |
_avi, 217 p. _b: illus. _c; 23 cm. |
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| 365 | _f495 | ||
| 655 |
_b, Nanotechnology. _b, Metal oxide semiconductor field-effect transistors -- Mathematical models. _b, Nanostructured materials -- Mathematical models. _b, Lundstrom, Mark _b, and Nanoscale transistors : device physics, modeling and simulation |
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| 942 |
_2ddc _cBOOK |
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| 999 |
_c9516 _d9516 |
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