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High Speed Devices and Circuits:

Bhat, K.N.

High Speed Devices and Circuits: MESFET: Drain current saturation IDs due to velocity saturation / K.N. Bhat - Madras Indian Insitiute of Technology - Video Lecture - NPTEL Lecture Series Electronics And Communication Engineering MESFET: Drain current saturation IDs due to velocity saturation .

Subjects--Topical Terms:
Electronics And Communication Engineering
High Speed Devices and Circuits
IIT Madras
MESFET: Drain current saturation IDs due to velocity saturation
NPTEL
Prof. K.N. Bhat

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