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10481.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10482.
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High Speed Devices and Circuits: Ohmic contacts on Semiconductors / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Ohmic contacts on Semiconductors
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10483.
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High Speed Devices and Circuits: Fermilevel pinning, IV Characteristics of Schottky Barrier Diode / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Fermilevel pinning, IV Characteristics of Schottky Barrier Diode
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10484.
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High Speed Devices and Circuits: Schottky Barrier Dides I V Characteristics of non Ideality / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Schottky Barrier Dides I V Characteristics of non Ideality
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10485.
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High Speed Devices and Circuits: Schottky Barrier Dides I V Characteristics of non Ideality / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Schottky Barrier Dides I V Characteristics of non Ideality
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10486.
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High Speed Devices and Circuits: Causes of non Idealities in the Schotty Barrier Diodes (I V Characteristics) / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Causes of non Idealities in the Schotty Barrier Diodes (I V Characteristics)
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10487.
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High Speed Devices and Circuits: MESFET opertations and I V Characteristics / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET opertations and I V Characteristics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10488.
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High Speed Devices and Circuits: MESFET I V Characteristics of Shocley's Model / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET I V Characteristics of Shocley's Model
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10489.
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High Speed Devices and Circuits: MESFET Schokley's Model and Velocity Saturation effect / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET Schokley's Model and Velocity Saturation effect
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10490.
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High Speed Devices and Circuits: MESFET Velosity Saturation Effect on drain Current Saturation / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET Velosity Saturation Effect on drain Current Saturation
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10491.
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High Speed Devices and Circuits: MESFET: Drain current saturation IDs due to velocity saturation / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Drain current saturation IDs due to velocity saturation
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10492.
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High Speed Devices and Circuits: MESFET: Effects of Channel length and gate length on IDS and gm / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Effects of Channel length and gate length on IDS and gm
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10493.
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High Speed Devices and Circuits: MESFET: Effects of Velocity Saturation and velocity Field Characteristics / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Effects of Velocity Saturation and velocity Field Characteristics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10494.
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High Speed Devices and Circuits: MESFET: Effects of velosity field characeristic - Overshoot Effects / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Effects of velosity field characeristic - Overshoot Effects
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10495.
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High Speed Devices and Circuits: MESFET: Velosity overshoot effects and self aligned MESFET SAINT / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Velosity overshoot effects and self aligned MESFET SAINT
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10496.
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High Speed Devices and Circuits: Self Aligned MESFET SAINT Threshold Veltoge and Sub Threshold Current / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Self Aligned MESFET SAINT Threshold Veltoge and Sub Threshold Current
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10497.
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High Speed Devices and Circuits: Hetero junction / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Hetero junction
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Publication details: Madras Indian Insitiute of Technology
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10498.
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High Speed Devices and Circuits: Hetero junctions and high electron mobility Transistor / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Hetero junctions and high electron mobility Transistor
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10499.
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High Speed Devices and Circuits: Hetero junctions and high electron mobility Transistor / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Hetero junctions and high electron mobility Transistor
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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10500.
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High Speed Devices and Circuits: High Electron Mobility Transistor / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering High Electron Mobility Transistor
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Publication details: Madras Indian Insitiute of Technology
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