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1761.
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High Speed Devices and Circuits: Dopants and impurities in GaAs and InP / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Dopants and impurities in GaAs and InP
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1762.
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High Speed Devices and Circuits: Brief Overview of GaAs Technology for high Speed Devices / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Brief Overview of GaAs Technology for high Speed Devices
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1763.
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High Speed Devices and Circuits: Epitaxial Techniques for GaGs and High speed devices / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Epitaxial Techniques for GaGs and High speed devices
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1764.
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High Speed Devices and Circuits: MBE and LPE for GaAs Epitoxy / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MBE and LPE for GaAs Epitoxy
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1765.
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High Speed Devices and Circuits: GaAs and InP Devices for Microelectronics / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering GaAs and InP Devices for Microelectronics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1766.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1767.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1768.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1769.
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High Speed Devices and Circuits: Ohmic contacts on Semiconductors / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Ohmic contacts on Semiconductors
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1770.
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High Speed Devices and Circuits: Fermilevel pinning, IV Characteristics of Schottky Barrier Diode / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Fermilevel pinning, IV Characteristics of Schottky Barrier Diode
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1771.
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High Speed Devices and Circuits: Schottky Barrier Dides I V Characteristics of non Ideality / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Schottky Barrier Dides I V Characteristics of non Ideality
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1772.
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High Speed Devices and Circuits: Schottky Barrier Dides I V Characteristics of non Ideality / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Schottky Barrier Dides I V Characteristics of non Ideality
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1773.
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High Speed Devices and Circuits: Causes of non Idealities in the Schotty Barrier Diodes (I V Characteristics) / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering Causes of non Idealities in the Schotty Barrier Diodes (I V Characteristics)
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1774.
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High Speed Devices and Circuits: MESFET opertations and I V Characteristics / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET opertations and I V Characteristics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1775.
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High Speed Devices and Circuits: MESFET I V Characteristics of Shocley's Model / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET I V Characteristics of Shocley's Model
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1776.
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High Speed Devices and Circuits: MESFET Schokley's Model and Velocity Saturation effect / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET Schokley's Model and Velocity Saturation effect
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1777.
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High Speed Devices and Circuits: MESFET Velosity Saturation Effect on drain Current Saturation / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET Velosity Saturation Effect on drain Current Saturation
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1778.
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High Speed Devices and Circuits: MESFET: Drain current saturation IDs due to velocity saturation / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Drain current saturation IDs due to velocity saturation
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1779.
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High Speed Devices and Circuits: MESFET: Effects of Channel length and gate length on IDS and gm / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Effects of Channel length and gate length on IDS and gm
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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1780.
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High Speed Devices and Circuits: MESFET: Effects of Velocity Saturation and velocity Field Characteristics / K.N. Bhat by Series: NPTEL Lecture Series. Electronics And Communication Engineering MESFET: Effects of Velocity Saturation and velocity Field Characteristics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras Indian Insitiute of Technology
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