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801.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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802.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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803.
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High Speed Devices and Circuits: Metal Semiconductors contacts for MESFET / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Metal Semiconductors contacts for MESFET
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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804.
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High Speed Devices and Circuits: Ohmic contacts on Semiconductors / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Ohmic contacts on Semiconductors
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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805.
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High Speed Devices and Circuits: Fermilevel pinning, IV Characteristics of Schottky Barrier Diode / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Fermilevel pinning, IV Characteristics of Schottky Barrier Diode
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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806.
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High Speed Devices and Circuits: Schottky Barrier Dides I V Characteristics of non Ideality / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Schottky Barrier Dides I V Characteristics of non Ideality
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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807.
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High Speed Devices and Circuits: Schottky Barrier Dides I V Characteristics of non Ideality / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Schottky Barrier Dides I V Characteristics of non Ideality
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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808.
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High Speed Devices and Circuits: Causes of non Idealities in the Schotty Barrier Diodes (I V Characteristics) / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Causes of non Idealities in the Schotty Barrier Diodes (I V Characteristics)
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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809.
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High Speed Devices and Circuits: MESFET opertations and I V Characteristics / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET opertations and I V Characteristics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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810.
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High Speed Devices and Circuits: MESFET I V Characteristics of Shocley's Model / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET I V Characteristics of Shocley's Model
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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811.
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High Speed Devices and Circuits: MESFET Schokley's Model and Velocity Saturation effect / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET Schokley's Model and Velocity Saturation effect
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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812.
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High Speed Devices and Circuits: MESFET Velosity Saturation Effect on drain Current Saturation / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET Velosity Saturation Effect on drain Current Saturation
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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813.
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High Speed Devices and Circuits: MESFET: Drain current saturation IDs due to velocity saturation / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET: Drain current saturation IDs due to velocity saturation
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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814.
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High Speed Devices and Circuits: MESFET: Effects of Channel length and gate length on IDS and gm / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET: Effects of Channel length and gate length on IDS and gm
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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815.
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High Speed Devices and Circuits: MESFET: Effects of Velocity Saturation and velocity Field Characteristics / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET: Effects of Velocity Saturation and velocity Field Characteristics
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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816.
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High Speed Devices and Circuits: MESFET: Effects of velosity field characeristic - Overshoot Effects / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET: Effects of velosity field characeristic - Overshoot Effects
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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817.
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High Speed Devices and Circuits: MESFET: Velosity overshoot effects and self aligned MESFET SAINT / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . MESFET: Velosity overshoot effects and self aligned MESFET SAINT
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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818.
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High Speed Devices and Circuits: Self Aligned MESFET SAINT Threshold Veltoge and Sub Threshold Current / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Self Aligned MESFET SAINT Threshold Veltoge and Sub Threshold Current
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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819.
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High Speed Devices and Circuits: Hetero junction / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Hetero junction
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
Online resources:
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820.
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High Speed Devices and Circuits: Hetero junctions and high electron mobility Transistor / K.N. Bhat by Series: NPTEL Lecture Series | . Electronics And Communication Engineering | . Hetero junctions and high electron mobility Transistor
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: Madras ; Indian Insitiute of Technology
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