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Design of loadless 4T-SRAM cell in 28 nm FDSOI and 28 nm BULK technology for low - power & low - area application. \N Shivaram Venkatesh

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Venkatesh, N Shivaram

Material type: Text

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TextSeries: .-(M.Tech Electrical Engineering). ,Under Supervision of Dr. G Naveen Babu Publication details: .-Shiv Nadar University,Dadri :Department of Electrical Engineering ,June,2015Description: 63 p. , Hard BoundGenre/Form:

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Item type	Current library	Status	Barcode
Project Report	SNU LIBRARY	Available	TH117

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