Simulation of dynamic random access memory (DRAM) designs and calculations of timing parameters at 14nm technology node /Mona Balasubramanian and Vrinda Maheshwari
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TextSeries: Dept. of Electrical Engineering. Under Supervision of Dr.Sonal Singhal Publication details: Shiv Nadar University,Dadri :Dept. of Electrical Engineering ,May 2018Description: ix,32 p. Hard Bound ;29 cmGenre/Form: Online resources:
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SNU LIBRARY | Available | TH389 |
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